A new method for extracting the effective channel length of MOSFETs

A new and simple method to extract the effective channel length L-eff of me tal-oxide superconductor field effect transistor (MOSFET)s is presented. Th e method, which is developed based on an auxiliary integral function, has t he advantage of determining the value of L-eff not influenced by the series resistances of the MOSFET. The method is tested in the environments of dev ice simulation and measurements. In addition, comparison is made between th e results obtained from the present method and a widely used L-eff extracti on method. (C) 1998 Elsevier Science Ltd. All rights reserved.