Modelling and simulation of beryllium diffusion in InGaAs compounds grown by gas source molecular beam epitaxy

Authors
Ketata, K Ketata, M Koumetz, S Marcon, J Masmoudi, M
Citation
K. Ketata et al., Modelling and simulation of beryllium diffusion in InGaAs compounds grown by gas source molecular beam epitaxy, MODEL SIM M, 6(6), 1998, pp. 747-753
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
ISSN journal
09650393 → ACNP
Volume
6
Issue
6
Year of publication
1998
Pages
747 - 753
Database
ISI
SICI code
0965-0393(199811)6:6<747:MASOBD>2.0.ZU;2-D
Abstract
The diffusion of Be during post-growth rapid thermal annealing (RTA) in InG aAs layers grown by gas source molecular beam epitaxy (GSMBE) has been stud ied. The observed secondary ion mass spectrometry (SIMS) concentration dist ributions, obtained for annealing cycles with time durations of 10 s to 240 s and temperatures in the range 700-900 degrees C for Be doping concentrat ion of 3 x 10(19) cm(-3), could be explained by a kick-out mechanism consid ering neutral Be interstitials and singly positively charged group III self -interstitials. Be and Ga, In interstitial diffusivities, the equilibrium c oncentration of Ga and In interstitials, as a function of temperature, are obtained from this work.