Y. Tsuchiya et al., EXCHANGE-ANISOTROPY OF CRNX FENY/CRNX TRILAYER THIN-FILMS PREPARED BYREACTIVE SPUTTERING/, Materials transactions, JIM, 38(2), 1997, pp. 91-98
The exchange magnetic anisotropy of CrNx/FeNy/CrNx trilayer films (x =
1.0 or 1.2, and y = 0.27) has been investigated by means of magnetiza
tion measurements. M-H loops of samples composed of nearly-stoichiomet
ric CrN1.0 with T-N = 260 K show exchange biasing shift H-eb below 200
K. The uniaxial anisotropy energy per film area is 3.0 x 10(-4) J/m(2
) at 5 K. For samples with 20 nm-thick FeN0.27 layer and CrN1.0 layers
thicker than 20 nm, the values of H-eb at 5 K are almost 13.5 kA/m. T
he samples composed of over-stoichiometric CrN1.2 show H-eb below 50 K
, indicating that T-N of over-stoichiometric CrN1.2 is much lower than
that of nearly-stoichiometric CrN1.0. The values of H-eb for stoichio
metric and over-stoichiometric systems are nearly equal below 20 K and
, in this temperature range, H-eb shows unusual enhancements with decr
easing temperature. It is suggested that the nitrogen composition at t
he interface region of stoichiometric CrN layer is over-stoichiometric
.