Annealing effects on irradiated n(+)n silicon detectors

Authors
Allport, PP Booth, PSL Green, C Greenall, A Jackson, JN Jones, TJ Richardson, JD Garcia, SMI Smith, NA Turner, PR Wormald, MP
Citation
Pp. Allport et al., Annealing effects on irradiated n(+)n silicon detectors, NUCL INST A, 420(3), 1999, pp. 473-480
Citations number
25
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
420
Issue
3
Year of publication
1999
Pages
473 - 480
Database
ISI
SICI code
0168-9002(19990111)420:3<473:AEOINS>2.0.ZU;2-R
Abstract
The performance of ATLAS forward region full-sized n(+)n prototype silicon micro-strip detectors has been studied after irradiation with 2 x 10(14) pr otons/cm(2) and 52 days annealing at 20 degrees C. The signal-to-noise rati o measured at - 10 degrees C with LHC speed read-out was found to be degrad ed primarily due to increased noise. The reduction in the reverse current a nd the changes in the voltage needed for maximum charge collection have bot h been studied as a function of annealing time. Above the depletion voltage , no effect on the charge collection efficiency has been observed during th is annealing period. (C) 1999 Elsevier Science B.V. All rights reserved.