Modeling of the kinetics of dislocation loops

The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the s urface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated fo r several annealing times and temperatures and they are compared with exper imental characterizations. This is the first step towards a full modeling o f the complex processes involved in the transient enhanced diffusion of bor on. (C) 1999 Elsevier Science B.V. All rights reserved.