Electronic stopping power for Monte Carlo simulation of ion implantation into SiC

A new electronic stopping pot-ver model for Monte Carlo simulation of ion i mplantation into 6H-SiC is presented. This model is based on the nonlinear density functional approach of Echenique et al. for the energy loss of slow ions moving through an electron gas and the ab initio pseudopotential calc ulations of Park et al. for the map of valence electrons of 6H-SiC crystal. A modified linear response theory has been used to treat the core electron s stopping. This model does not need fitting parameters and arrows to fit t he experimental distributions of implanted dopants in SiC both the peak reg ion and the channeling tail of the SIMS profiles. (C) 1999 Elsevier Science B.V. All rights reserved.