Influence of argon and hydrogen ions energy on the structure of a-Si : H prepared by ion-beam-assisted evaporation

Hydrogenated amorphous silicon films were deposited by ion-beam-assisted ev aporation onto substrates maintained at 200 degrees C. The gases introduced in the ion source were pure hydrogen or an argon-hydrogen mixture. The ene rgy of the ions was varied by biasing the substrate. By combined infrared s pectrometry and thermal desorption spectrometry experiments, it is inferred that the bombardment of the growing a-Si:H film by 300 eV hydrogen ions or 20 eV argon ions produces a densification of the material. (C) 1999 Elsevi er Science B.V. All rights reserved.