Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile

Damage has been observed in MeV-ion-implanted Si away from the maximum of t he nuclear energy deposition profile, mainly around the half of the project ed ion range, R-p/2. Cu gettering has been used for the detection of irradi ation defects which are formed during annealing at temperatures between 700 degrees C and 1000 degrees C. This damage is primarily created by the impl anted ions on their trajectory and consists of intrinsic defects remaining so small that they have not yet been resolved. These defects undergo a defe ct evolution during annealing which results in a decrease of the width of t he damage layer with increasing temperature and prolonged time of the annea ling. (C) 1999 Elsevier Science B.V. All rights reserved.