Citation
P. Godignon et al., As-Al recoil implantation through Si3N4 barrier layer, NUCL INST B, 147(1-4), 1999, pp. 101-105
Citations number
5
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
147
Issue
1-4
Year of publication
1999
Pages
101 - 105
Database
ISI
SICI code
0168-583X(199901)147:1-4<101:ARITSB>2.0.ZU;2-N
Abstract
Al recoil implantation have been shown to be a possible alternative to dire
ct Al ion implantation to avoid usual problems linked with Al sources. Poor
efficiency of the recoil + annealing process is observed if no barrier or
an oxyde screen layers are used. This problem can be solved using a Si3N4 s
creen layer. Then, P-N and N+/P/N structures can be obtained with deep low
doped P-well with reduced thermal budget. (C) 1999 Elsevier Science B.V. Al
l rights reserved.