Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon

A silicon wedge mask with thickness varying from approximately 5 mu m to a few hundred mu m has been used for converting the depth distribution of def ect concentration induced by 4 MeV H+ ion implantation in silicon to a late ral scale on the surface, i.e. the distance from the edge of the wedge mask . Thus, using proper devices fabricated on bulk Si prior to ion implantatio n, depth profiles of the generation lifetime of minority charge carriers an d of the different defect densities can be measured by the transient capaci tance method and by Deep Level Transient Spectroscopy (DLTS), respectively. The distribution of lifetime follows well that of the implantation induced vacancies calculated by the TRIM code in the applied dose range (from 1x10 (10) to 3x10(11) H+/cm(2)). The correlation between implantation dose and l ifetime decrease is also discussed. (C) 1999 Elsevier Science B.V. All righ ts reserved.