Extended defects in Si wafers implanted with ions of rare-earth elements

Authors
Vdovin, VI Yugova, TG Sobolev, NA Shek, EI Makovijchuk, MI Parshin, EO
Citation
Vi. Vdovin et al., Extended defects in Si wafers implanted with ions of rare-earth elements, NUCL INST B, 147(1-4), 1999, pp. 116-121
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
147
Issue
1-4
Year of publication
1999
Pages
116 - 121
Database
ISI
SICI code
0168-583X(199901)147:1-4<116:EDISWI>2.0.ZU;2-V
Abstract
Structural defects arising in Cz-Si wafers after implantation with high-ene rgy ions of rare-earth elements (Er, Ho, Dy) and annealing in a chlorine-co ntaining ambience were studied by transmission electron microscopy and chem ical etching/Nomarski microscopy. Regularities of extended defect formation in dependence on implant and annealing conditions as well as evolution of structural defect patterns during thermal annealing have been established. (C) 1999 Elsevier Science B.V. All rights reserved.