Annealing behaviour of defects in helium implanted MgO

Citation
H. Schut et al., Annealing behaviour of defects in helium implanted MgO, NUCL INST B, 147(1-4), 1999, pp. 212-215
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
147
Issue
1-4
Year of publication
1999
Pages
212 - 215
Database
ISI
SICI code
0168-583X(199901)147:1-4<212:ABODIH>2.0.ZU;2-Q
Abstract
Vir,ain MgO (110) single crystals have been implanted with 30 keV He-3(+) i ons to a dose of 5x10(15) cm(-2). After implantation the samples have been annealed under air for 30 min in a tube oven. The annealing behaviour of th e defects and He-3 has been monitored by three experimental techniques: pos itron beam Doppler broadening, neutron depth profiling (NDP) and optical ab sorption in the UV to near-IR region. The observations in MgO lead to the c onclusion that below 1000 degrees C the vacancy like defects are stabilised by the implanted He atoms. Above this temperature He may dissociate from t hese small defects, allowing the formation of larger vacancy clusters. (C) 1999 Elsevier Science B.V. All rights reserved.