Xenon-ion-beam modifications of a-SiO2 and Ni/a-SiO2 layers

Modifications of a-SiO2 films and Ni/a-SiO2 bilayers by irradiations with 9 0-350 keV Xe ions have been investigated. The effects of subsequent thermal annealings in vacuum at 298-1173 K have also been studied. The analyses we re performed by means of Rutherford Backscattering Spectrometry and surface profilometry. We here report on the results of ion-beam induced surface ro ughening and sputtering and of the noble-gas collection curves. As to the a thermal ion-beam mixing at the Ni/a-SiO2 interface, a low mixing rate in ag reement with the ballistic model was observed. Only little Xe precipitation , which would indicate the presence of end-of-range spikes, occurs at the i nterface. Most effects were found to strongly depend on the implanted ion f luence. (C) 1999 Elsevier Science B.V. All rights reserved.