Effect of oxygen on ion-beam induced synthesis of SiC in silicon

The properties of Si-structures with a buried silicon carbide (SIC) layer c reated by high-dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectrosc opy. The effect of additional oxygen implantation on the peculiarities of S IC layer formation was also studied. It was shown that under the same impla ntation and post-implantation annealing conditions the buried SiC layer is more effectively formed in Cz-Si or in Si (Cz-or Fz-) subjected to addition al oxygen implantation. So we can conclude that oxygen in silicon promotes the SiC layer formation due to SiOx precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed. Carbon segre gation and amorphous carbon film formation on SiC grain boundaries were rev ealed. (C) 1999 Elsevier Science B.V. All rights reserved.