A novel (SiC)(1-x)(AlN)(x) compound synthesized using ion beams

The formation of a novel (SiC)(1-x)(AlN)(x) compound (x=0.2) at low tempera tures within the miscibility gap of the SiC/AlN phase diagram by hot, high- dose co-implantation of N+ and Al+ ions into 6H-SiC substrates is investiga ted. The compound layers have been studied by Rutherford backscattering spe ctrometry/ion channelling (RBS/C), Auger electron spectroscopy (AES), polar ized infrared reflection spectroscopy (PIRR) and cross sectional electron m icroscopy (XTEM) and the temperature dependence of their fabrication has be en examined. An optimum temperature window has been established within whic h the structure of the synthesized material retains good crystallinity duri ng implantation. (C) 1999 Elsevier Science B.V. All rights reserved.