Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions

This work is an initial attempt to model the fundamental processes that occ ur when SiC is implanted at elevated substrate temperatures T-i (200 degree s-800 degrees) with high doses of N+ and Al+ ions to synthesise buried laye rs of(SIC)(1-x)(AlN)(x). The theoretical treatment has involved ballistic c alculation of the implant and damage profiles by means of computer codes (T RIRS and DYTRIRS) specifically developed for modelling complex, multi-eleme ntal targets. The influence of the mechanical stress induced the by implant ed ions has been taken into account by adding a special term to the differe ntial equations describing the evolution of the implant and damage distribu tions. Results from the simulations have been correlated with data obtained by Rutherford backscattering spectrometry/ion channelling (RBS/C). The the oretical approach described has enabled one to determine the interaction en ergies of the interstitials with the internal stress field as well as the r ole of stress on the defect distribution. (C) 1999 Published by Elsevier Sc ience B.V. All rights reserved.