Formation of thin silicon nitride layers on Si by low energy N-2(+) ion bombardment

The formation of nitride layers in silicon due to low-energy implantation o f nitrogen in a wide range of ion bombardment parameters (energy E and angl e of incidence theta) and for different temperatures of subsequent annealin g (T) has been studied using Anger Electron Spectroscopy (AES), Secondary I on Mass Spectrometry (SIMS) and Fourier Transform InfraRed Spectroscopy (FT IRS). Bombardment at angles theta<40 degrees produces an amorphous layer of stoichiometric Si3N4 the thickness of which depends on implantation energy and incidence angle. Annealing of the samples at 1000 degrees C produces l ayers with rather sharp interfaces. (C) 1999 Elsevier Science B.V. All righ ts reserved.