Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon

The behaviour of oxygen and nitrogen sequentially implanted into silicon at an energy of 100 and 175 keV with total doses of 5 x 10(16) and 2 x 10(17) cm(-2) is reported. The implantation sequence and energies were varied. In all cases the wafer temperature during implantation was maintained at 300 degrees C. The samples were pulse annealed in using a halogen lamp to achie ve temperatures of 1100 degrees C and 1200 degrees C for 2-60 s. The sample s were analysed using FTIR, XRD and SIMS. For a total dose of 5 x 10(16) cm (-2) no mutual redistribution of oxygen and nitrogen occurs during annealin g. The impurity atoms (O and N) are found to bind to radiation defects. Ann ealing does not lead to any detectable new phase formation but does cause d issociation of oxygen-vacancy complexes and loss of oxygen from the bulk. F or a dose of 2 x 10(17) cm(-2) phase formation occurs during implantation. The mutual redistribution of the impurity atoms during annealing occurs but only if oxygen is implanted deeper than nitrogen. This redistribution is g reatest if nitrogen is implanted prior to oxygen. (C) 1999 Elsevier Science B.V. All rights reserved.