Formation of complex Al-N-C layer in aluminium by successive carbon and nitrogen implantation

Authors
Uglov, VV Cherenda, NN Khodasevich, VV Sokol, VA Abramov, II Danilyuk, AL Wenzel, A Gerlach, J Rauschenbach, B
Citation
Vv. Uglov et al., Formation of complex Al-N-C layer in aluminium by successive carbon and nitrogen implantation, NUCL INST B, 147(1-4), 1999, pp. 332-336
Citations number
10
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
147
Issue
1-4
Year of publication
1999
Pages
332 - 336
Database
ISI
SICI code
0168-583X(199901)147:1-4<332:FOCALI>2.0.ZU;2-R
Abstract
The results of Auger electron spectroscopy and transmission electron micros copy of the surface layer of aluminium after successive implantation by car bon and nitrogen ions are presented in this work. The energy of implanted i ons is 40 keV. The implantation dose varies in the range (3.3-6.5) x 10(17) ions/cm(2). The findings show that successive implantation leads to the fo rmation of two main layers in aluminium. The first layer is AlNCx (0 < x < 0.5) layer with violated hcp. AlN structure, where carbon atoms form bonds with nitrogen atoms. The second layer contains disoriented Al4C3 precipitat es and carbon atoms migrated from the first layer. The mechanism of migrati on is discussed. (C) 1999 Elsevier Science B.V. All rights reserved.