Largely detuned injection-locked semiconductor lasers

The equations for a semiconductor laser subject to injection are examined n umerically and analytically for large values of the detuning parameter. Our analysis is motivated by recent experimental studies using either distribu ted feedback laser diodes or vertical-cavity surface-emitting lasers. For n egative detuning, we show that a pulsating intensity regime may coexist wit h a stable steady state. Transitions between time-periodic and steady state s as the injection rate is progressively increased or decreased appear thro ugh sudden jumps. Of particular interest is the fact that the upper locking point corresponds to a bifurcation point to quasiperiodic intensity oscill ations. For positive detuning, the pulsating intensity regime is the only s table state until steady state locking smoothly occurs through a Hopf bifur cation point. Our analysis is based on a new asymptotic analysis of the sem iconductor laser equations which allows analytical expressions for all bifu rcation points. (C) 1999 Elsevier Science B.V. All rights reserved.