A simple optical sideband injection locking technique is demonstrated to fr
equency offset-lock a 674 nm slave extendedcavity diode laser to a single f
requency source. By injecting light from a master laser into either sideban
d of the frequency modulated extended cavity slave laser, it is shown that
the carrier of the slave is frequency locked to the master laser with a rel
ative linewidth much less than 10 Hz. The locking bandwidth is investigated
to determine the largest capture range. An observation of the 674 nm S-2(1
/2)-D-2(5/2) transition in a single ion of Sr-88(+) was performed using thi
s laser system, yielding approximate to 1 kHz linewidth Zeeman structure, l
imited by the master laser linewidth. (C) 1998 National Physical Laboratory
. Published by Elsevier Science B.V. All rights reserved.