The growth of thin Cs and K films on Si(111)7 x 7 kept at 170 K has been fo
llowed by second harmonic generation (SHG) during continuous deposition. In
itially, both types of alkali atoms adsorb at dangling bond sites, in a sim
ilar way as at room temperature. At low temperature the completion of one o
verlayer is followed by multilayer growth. This causes orders of magnitude
increase of SHG due to excitations of plasmons. A fairly sharp transition t
emperature below which multilayers can exist was found at 260 K for both me
tals. For Cs the variations in SHG with exposure can be explained in terms
of coverage variations of the resonance frequency. The variations of SHG du
ring deposition of K indicate the formation of islands.