Nonequilibrium spin distribution in a single-electron transistor

Authors
Korotkov, AN Safarov, VI
Citation
An. Korotkov et Vi. Safarov, Nonequilibrium spin distribution in a single-electron transistor, PHYS REV B, 59(1), 1999, pp. 89-92
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
1
Year of publication
1999
Pages
89 - 92
Database
ISI
SICI code
0163-1829(19990101)59:1<89:NSDIAS>2.0.ZU;2-8
Abstract
Single-electron transistor with ferromagnetic outer electrodes and a nonmag netic island is studied theoretically. Nonequilibrium electron-spin distrib ution in the island is caused by tunneling current. The dependences of the magnetoresistance ratio delta on the bias and gate voltages show the dips w hich are directly related to the induced separation of Fermi levels for ele ctrons with different spins. Inside a dip delta can become negative. [S0163 -1829(98)02046-3].