Ballistic electron transport through magnetic domain walls

Authors
van Hoof, JBAN Schep, KM Brataas, A Bauer, GEW Kelly, PJ
Citation
Jban. Van Hoof et al., Ballistic electron transport through magnetic domain walls, PHYS REV B, 59(1), 1999, pp. 138-141
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
1
Year of publication
1999
Pages
138 - 141
Database
ISI
SICI code
0163-1829(19990101)59:1<138:BETTMD>2.0.ZU;2-B
Abstract
Electron transport limited by the rotating exchange potential of domain wal ls is calculated in the ballistic limit for the itinerant ferromagnets Fe, Co, and Ni. When realistic band structures are used, the domain-wall magnet oresistance is enhanced by orders of magnitude compared to the results for previously studied two-band models. Increasing the pitch of a domain wall b y confinement in a nanostructured point contact is predicted to give rise t o a strongly enhanced magnetoresistance. [S0163-1829(99)02302-4].