Scaling of the conductivity with temperature and uniaxial stress in Si : Bat the metal-insulator transition

Authors
Bogdanovich, S Sarachik, MP Bhatt, RN
Citation
S. Bogdanovich et al., Scaling of the conductivity with temperature and uniaxial stress in Si : Bat the metal-insulator transition, PHYS REV L, 82(1), 1999, pp. 137-140
Citations number
34
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
1
Year of publication
1999
Pages
137 - 140
Database
ISI
SICI code
0031-9007(19990104)82:1<137:SOTCWT>2.0.ZU;2-P
Abstract
Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value S-c, we find the de conductivity at low temperatures s hows an excellent fit to the scaling form sigma(S, T) = AT(x) f[(S - S-c)/T -y] on both sides of the transition. The scaling functions yield reliable d eterminations of the temperature dependence of the conductivity in the meta llic and insulating phases in the critical region. [S0031-9007(98)08115-0].