Defect-induced oxidation of graphite

Citation
Sm. Lee et al., Defect-induced oxidation of graphite, PHYS REV L, 82(1), 1999, pp. 217-220
Citations number
14
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
1
Year of publication
1999
Pages
217 - 220
Database
ISI
SICI code
0031-9007(19990104)82:1<217:DOOG>2.0.ZU;2-9
Abstract
Atomic vacancies with controlled depth and size are generated on a graphite surface by low-energy ion bombardment. The reactivity of vacancies towards an oxygen molecule is investigated by using scanning tunneling microscopy (STM) and density functional theory. An oxygen molecule (i) exothermally di ssociates and then chemisorbs at the top sites and/or the bridge sites of a vacancy, or (ii) forms a precursor state of molecular oxygen at a bridge s ite. Reaction pathways for oxidative etching are proposed to interpret serp entine and circular etching patterns observed by STM. [S0031-9007(98)08058- 2].