GAIN-COUPLED DFB LASERS WITH ACTIVE LAYER GROWN ON A CORRUGATED SUBSTRATE BY MOLECULAR-BEAM EPITAXY

Authors
ROBADEY J MARTIN D GLICK M SILVA PC JOUNEAU PH MARTI U REINHART FK
Citation
J. Robadey et al., GAIN-COUPLED DFB LASERS WITH ACTIVE LAYER GROWN ON A CORRUGATED SUBSTRATE BY MOLECULAR-BEAM EPITAXY, Electronics Letters, 33(4), 1997, pp. 297-298
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
4
Year of publication
1997
Pages
297 - 298
Database
ISI
SICI code
0013-5194(1997)33:4<297:GDLWAL>2.0.ZU;2-N
Abstract
Using in situ hydrogen desorption before the growth of the 12nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lase rs at 989nm is achieved al room temperature. As-cleaved lasers, 600 mu m long, have threshold current densities as low as 250A/cm(2) and typ ical sidemode suppression ratios of 40dB.