OXIDATION OF ALGAAS LAYERS FOR TAPERED APERTURES IN VERTICAL-CAVITY LASERS

Authors
NAONE RL HEGBLOM ER THIBEAULT BJ COLDREN LA
Citation
Rl. Naone et al., OXIDATION OF ALGAAS LAYERS FOR TAPERED APERTURES IN VERTICAL-CAVITY LASERS, Electronics Letters, 33(4), 1997, pp. 300-301
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
4
Year of publication
1997
Pages
300 - 301
Database
ISI
SICI code
0013-5194(1997)33:4<300:OOALFT>2.0.ZU;2-U
Abstract
By using step-graded Al compositions of epitaxial AlGaAs, we can form a tapered oxidation front due to the combination of rapid lateral oxid ation in a higher Al content layer and slow transverse oxidation into adjacent lower Al content layers. A study of the oxidation behaviour o f this epitaxial aperture layer demonstrates the feasibility of tapere d dielectric apertures which have been predicted to provide much lower losses in vertical cavity lasers.