LOW-TEMPERATURE-GROWN GAAS PROBE FOR ULTRAFAST ELECTRICAL SIGNAL MEASUREMENT

Authors
TAKEUCHI K MIZUHARA A
Citation
K. Takeuchi et A. Mizuhara, LOW-TEMPERATURE-GROWN GAAS PROBE FOR ULTRAFAST ELECTRICAL SIGNAL MEASUREMENT, Electronics Letters, 33(4), 1997, pp. 325-326
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
4
Year of publication
1997
Pages
325 - 326
Database
ISI
SICI code
0013-5194(1997)33:4<325:LGPFUE>2.0.ZU;2-5
Abstract
A new measurement system for ultrafast electrical signals using a scan ning force microscope (SFM) has been developed. The key of the system is a GaAs probe with a photoconductive semiconductor switch (PCSS) whi ch is used as a sampler in an optical sampling procedure. The probe fa brication process and the result of a 2.4ps pulse measurement have bee n reported here.