1.26W CW DIFFRACTION-LIMITED INGAASP FLARED AMPLIFIER AT 780 NM

Authors
OBRIEN S GEELS RS PIANO WE LANG RJ
Citation
S. Obrien et al., 1.26W CW DIFFRACTION-LIMITED INGAASP FLARED AMPLIFIER AT 780 NM, Electronics Letters, 33(4), 1997, pp. 328-330
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
4
Year of publication
1997
Pages
328 - 330
Database
ISI
SICI code
0013-5194(1997)33:4<328:1CDIFA>2.0.ZU;2-R
Abstract
Flared amplifiers fabricated with InGaAsP alloys have produced 1.26W C W at a wavelength of 780nm in a single-lobed, diffraction-limited far field pattern. Under quasi-CW conditions, 2.4W of diffraction-limited power has been obtained. This represents the highest diffraction-limit ed power reported at 780nm and the highest diffraction-limited power r eported in the InGaAsP material system.