Micro-Raman analysis of the effects of post-silicidation thermal treatments on C54 TiSi2 formation in confined areas

Authors
Quilici, S Meinardi, F Sabbadini, A
Citation
S. Quilici et al., Micro-Raman analysis of the effects of post-silicidation thermal treatments on C54 TiSi2 formation in confined areas, SOL ST COMM, 109(3), 1999, pp. 141-143
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
109
Issue
3
Year of publication
1999
Pages
141 - 143
Database
ISI
SICI code
0038-1098(1999)109:3<141:MAOTEO>2.0.ZU;2-P
Abstract
The effects of different post-formation thermal annealings on the phase tra nsition in TiSi2 patterned films were ivestigated. Results show that, whate ver the thermal budget, a large number of small area structures remain in t he highly resistive C49 phase. Data analysis shows that the C54 nucleation site density is unaffected by an increase of the annealing temperature. (C) 1998 Published by Elsevier Science Ltd.