Characteristics and excitation mechanism of SrGa2S4 : Ce TFEL based on a novel structure

Thin film electroluminescent devices based on the novel scheme SiO2/SrGa2S4 :Ce/SiO2/SiO were prepared by the electron beam evaporation method. In this case, the hot-electrons were preheated in the SiO layer and accelerated in the SiO2 layers; the dielectric constant of SiO and SiO2 was found to be l ess than that of SrGa2S4:Ce. These two points differ from the situation fou nd in conventional TFEL devices. The characteristics of the devices were in vestigated. The emission wave form of SrGa2S4:Ce shows a direct impact exci tation process. (C) 1998 Published by Elsevier Science Ltd.