Transverse magnetovoltage in epitaxial La0.67Ca0.33MnO3 thin films

Citation
C. Mitze et al., Transverse magnetovoltage in epitaxial La0.67Ca0.33MnO3 thin films, SOL ST COMM, 109(3), 1999, pp. 189-194
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
109
Issue
3
Year of publication
1999
Pages
189 - 194
Database
ISI
SICI code
0038-1098(1999)109:3<189:TMIELT>2.0.ZU;2-S
Abstract
We present detailed Hall effect, planar Hall effect and resistance measurem ents of an epitaxial La0.67Ca0.33MnO3 thin film. In the ferromagnetic regim e the transverse voltage shows a similar dependence on the external magneti c field when it is applied perpendicular to (Hall effect) and in the plane of the film (planar Hall effect). By this observation it is established tha t the anomalous Hall effect is not the main origin of the transverse magnet ovoltage. It is the anisotropic magnetoresistance (AMR), which we observe i n both the longitudinal and the planar Hall configuration that: causes the transverse magnetovoltage. (C) 1998 Elsevier Science Ltd. All rights reserv ed.