Hole transport in oriented polysilane films

Hole transport in oriented films of poly (di-n-pentylsilane) has been studi ed in terms of the effect of the orientation and conformation of Si chain o n the drift mobility and disorder of hopping sites. The results support the view that (1) the interchain overlap of wave functions for a 7/3 helix is higher than that for a transoid, (2) the hopping sites have higher diagonal and off-diagonal disorder in a 7/3 helix than in a transoid, and (3) the o rientation of Si chains significantly enhances the interchain overlap of wa ve functions and reduces the diagonal (1/1.3) and off-diagonal disorder par ameter (1/2.7) in a transoid but has no effect in the case of a 7/3 helix. (C) 1998 Elsevier Science Ltd. All rights reserved.