We measured the diagonal component of the transverse magnetoresistance in t
wo pseudomorphic InxGa1-xAs HEMT structures. The quantum lifetime is obtain
ed from the variation of the amplitude of the Shubnikov-de Hass oscillation
s with the magnetic field, from Landau levels index between 22 and 5, using
a modified Dingle plot method which takes into account the quadratic relat
ion between the magnetoresistance and the density of states at the Fermi le
vel. The quantum lifetimes found in this manner are consistent with quantum
lifetimes determined at low magnetic field using Dingle plots and at high
magnetic field with a peak magnetoresistance calculation. (C) 1998 Elsevier
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