The process, structure and performance of pen cells for the intermediate temperature SOFCs

Citation
W. Bai et al., The process, structure and performance of pen cells for the intermediate temperature SOFCs, SOL ST ION, 115, 1998, pp. 259-263
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE IONICS
ISSN journal
01672738 → ACNP
Volume
115
Year of publication
1998
Pages
259 - 263
Database
ISI
SICI code
0167-2738(199812)115:<259:TPSAPO>2.0.ZU;2-1
Abstract
The paper is principally concerned with strategic investigations based on t he development of planar supported thin film electrolyte (STEF) configurati ons for intermediate temperature SOFC applications. A novel and cost effect ive electrostatic assisted vapour deposition process has been used to depos it dense YSZ film onto the porous anode substrates. Several approaches were investigated to deposit a dense and crack-free YSZ film onto the porous an ode substrate during the fabrication of PEN structure. The use of an amorph ous YSZ thin film followed by a crystalline YSZ film deposition using the c ontinuous EAVD process seem to be able to produce a dense and crack-free YS Z film onto the porous NiO-YSZ substrate with a well defined interface. Ind ividual dense/porous films and PEN assembly were characterised using XRD, S EM, and I-V test techniques for structural examination and electrical measu rements. (C) 1998 published by Elsevier Science B.V. All rights reserved.