ULTRA-HIGH-SPEED 1-MU-M V-GATE GAAS-MESFET WITH CUTOFF FREQUENCY UP TO 47 GHZ BY 2D SIMULATION

Authors
WANG YJ LU SS
Citation
Yj. Wang et Ss. Lu, ULTRA-HIGH-SPEED 1-MU-M V-GATE GAAS-MESFET WITH CUTOFF FREQUENCY UP TO 47 GHZ BY 2D SIMULATION, Electronics Letters, 33(6), 1997, pp. 538-539
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
6
Year of publication
1997
Pages
538 - 539
Database
ISI
SICI code
0013-5194(1997)33:6<538:U1VGWC>2.0.ZU;2-Q
Abstract
A new structure called the 'V-gate' MESFET is proposed. The maximum cu toff frequency of the V-gate device was found to be 47GHz for 1 mu m g ate opening. This new device structure is very suitable for microwave applications.