Formation of titanium nitride films by energetic cluster impact deposition

Titanium nitride (TiN) films were formed on silicon (100) substrates at roo m temperature by energetic cluster impact deposition (ECID). The films show a gold-like color. The influence of deposition conditions, such as nitroge n partial pressure (P-N2) and sputter current (I-s), on the propel-ties of the films, was investigated by Rutherford backscattering spectrometry (RBS) , proton elastic scattering (PES) and X-ray diffraction (XRD). The RES resu lts show the film thickness is typically 360 nm. It is found using PES spec tra that the relative content of nitrogen in the films increases first fast then slowly with the increase of nitrogen gas partial pressure (P-N2) XRD results show the films appear to be (220) preferential orientation. Additio nally, a certain amount of oxygen impurity was incorporated into the films. Some explanations for the above results are also given in this paper. (C) 1998 Elsevier Science S.A. All rights reserved.