Raman study of the amorphous SiNi alloy

Citation
A. Belu-marian et al., Raman study of the amorphous SiNi alloy, THIN SOL FI, 335(1-2), 1998, pp. 90-96
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
335
Issue
1-2
Year of publication
1998
Pages
90 - 96
Database
ISI
SICI code
0040-6090(199812)335:1-2<90:RSOTAS>2.0.ZU;2-A
Abstract
Raman measurements were carried out for sputtered amorphous SiNi thin films . Raman scattering in a-Si is not influenced by a low Ni content (less than or equal to 8.3 at.%) to any significant degree, the position of peaks and their widths are not changed. A shift to lower frequencies and a broadenin g of the high frequency band transverse optical (TO) (which results in a re distribution of phonon states to lower frequencies) are observed with an in crease of the Ni content. These modifications are correlated with the prese nce of Ni in the coordination sphere of Si, as resulted from the calculated local structure in Ni-Si alloys on the basis of the diffraction patterns. (C) 1998 Elsevier Science S.A. All rights reserved.