Extraction of interface state density of Pt/p-strained-Si Schottky diode

Authors
Chattopadhyay, S Bera, LK Ray, SK Bose, PK Maiti, CK
Citation
S. Chattopadhyay et al., Extraction of interface state density of Pt/p-strained-Si Schottky diode, THIN SOL FI, 335(1-2), 1998, pp. 142-145
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
335
Issue
1-2
Year of publication
1998
Pages
142 - 145
Database
ISI
SICI code
0040-6090(199812)335:1-2<142:EOISDO>2.0.ZU;2-G
Abstract
Interface state density of Pt/p-strained-Si Schottky contacts has been dete rmined using experimental forward bias current-voltage (J-V) and capacitanc e-voltage (C-V techniques. The effects of interfacial oxide layers and seri es resistance present in the structure have been studied using a SEMICAD de vice simulator. It is shown that the interface state density can be obtaine d directly from the measure of C-V data and is found to decrease as the ene rgy from the edge of the valence band increases. (C) 1998 Elsevier Science S.A. All rights reserved.