Porous silicon capping by CVD diamond

Citation
Aj. Fernandes et al., Porous silicon capping by CVD diamond, VACUUM, 52(1-2), 1999, pp. 215-218
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
52
Issue
1-2
Year of publication
1999
Pages
215 - 218
Database
ISI
SICI code
0042-207X(199901)52:1-2<215:PSCBCD>2.0.ZU;2-T
Abstract
In the last few years important research efforts were put concerning the op tical properties of porous silicon (PS). Some interesting devices can be ma de using this new material (ex: L.E.D.s and micro cavities). However, a set of unsolved problems is keeping some distance between PS and its applicati ons. Among these problems are the chemical instability and mechanical weakn ess. In this work, we attempted a CVD diamond protective layer deposition on PS. The optical properties of PS were preserved, as confirmed by photoluminesc ence (PL). The diamond film adhesion was checked by microhardness testing s howing no crack propagation with a load of 200 gf. Nanoindentation measurem ents with 0.1 gf on the resulting surface showed a ten fold increase in har dness with respect to the uncoated material. (C) 1998 Elsevier Science Ltd. All rights reserved.