Crystal growth of epitaxially grown PbTiO3 thin films on miscut SrTiO3 substrate

Citation
K. Wasa et al., Crystal growth of epitaxially grown PbTiO3 thin films on miscut SrTiO3 substrate, VACUUM, 51(4), 1998, pp. 591-594
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
51
Issue
4
Year of publication
1998
Pages
591 - 594
Database
ISI
SICI code
0042-207X(199812)51:4<591:CGOEGP>2.0.ZU;2-R
Abstract
Thin films of (001)PbTiO3 (PT), 5-260 nm thickness, were grown by sputterin g on miscut (001)SrTiO3 (ST) substrate with miscut angle of 1.7 degrees at 600 degrees C. Although the sputtered PT thin films were deformed by the tw o dimensional compressive force due to the small lattice of ST substrate an d showed large tetragonality of c/a = 1.1 at RT, i.e. c/a = 1.06 for bulk P T, the PT thin films showed a single domain-single crystal perovskite struc ture through a large area with extremely smooth surface on an atomic-scale. The film growth was governed by a step-flow model showing a layer growth. it was found that the layer growth was stable at low oxygen partial pressur e during the sputtering deposition. (C) 1998 Elsevier Science Ltd. All righ ts reserved.