Noble gas influence on reactive radio frequency magnetron sputter deposition of TiN films

Citation
Cp. Lungu et al., Noble gas influence on reactive radio frequency magnetron sputter deposition of TiN films, VACUUM, 51(4), 1998, pp. 635-640
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
51
Issue
4
Year of publication
1998
Pages
635 - 640
Database
ISI
SICI code
0042-207X(199812)51:4<635:NGIORR>2.0.ZU;2-P
Abstract
The noble gases' (Ar, He and Ne) influence on the TiN deposition by reactiv e radio frequency (rf) magnetron sputtering have been studied. Effects of t he interelectrode distance and the discharge power were also taken into acc ount The optical diagnostics of plasma was carried out The characteristics of Ti emission (395.82 nm) from titanium atoms and N-2(+) emission (391.44 nm) of the first negative system were investigated in detail. Ti (395.82 nm )/Ni-2(+) (391.44 nm) intensity ratio between Ti/N-2 emission was correlate d with the deposition rate of the films. The enhancement of the TiN (111) p eak intensity in the neon or helium presence in the ternary gas mixtures (A r + N-2 + Ne), (Ar + N-2 + He) was emphasized. (C) 1998 Elsevier Science Lt d. All rights reserved.