Structure and properties of CeN thin films deposited in arc discharge

CeN thin films were deposited at 573 K by reactive are ion plating sustaine d by electron beam evaporation. Optical emission observation revealed that Ce vapor are discharge in nitrogen atmosphere was very localized and the re lative emission intensity of Ce+ to atomic Ce was proportional to the are c urrent, whereas nitrogen gas became less excited with the increasing are cu rrent. The 111 orientation of CeN films was developed with the increasing a re current CeN indicated p-type electrical conductivity and showed paramagn etic properties at 10 K. The carrier concentration in the films increased a fter exposure to the air which suggested the existence of Ce4+ state in CeN film. The CeN film with a density of 7.82 g/cm(3) showed higher hardness t han single crystalline Si wafer. (C) 1998 Elsevier Science Ltd. All rights reserved.