Development of a locally-electron-heated plasma source for HDP-CVD process

A new ECR plasma source has been developed. ECR regions are produced locall y by permanent magnets placed around the chamber, Microwaves enter the cham ber through the side. Electrons are produced and heated in the local ECR re gions near the microwave ports. The high energy electrons diffuse into the chamber where a cusp magnetic field is formed. Plasma produced by the high energy electrons is confined in the cusp magnetic field. Uniform high densi ty plasma has been produced over a large area. in order to check the perfor mance of the plasma source, it has been applied to the SiO2 deposition proc ess. Uniform and rapid SiO2 film formation has been achieved for 200 mm-dia meter wafers. (C) 1998 Published by Elsevier Science Ltd. All rights reserv ed.