Uniformity improvement in dc magnetron sputtering deposition on a large area substrate

Citation
T. Seino et al., Uniformity improvement in dc magnetron sputtering deposition on a large area substrate, VACUUM, 51(4), 1998, pp. 791-793
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
51
Issue
4
Year of publication
1998
Pages
791 - 793
Database
ISI
SICI code
0042-207X(199812)51:4<791:UIIDMS>2.0.ZU;2-W
Abstract
Single-substrate transfer type sputtering systems have been used for deposi tion of electrode films in liquid crystal display (LCD) production process. in deposition on a large area substrate such as 550 mm x 650 mm thickness distribution has a feature of diagonal non-uniformity The differences of el ectron flow distances from a target to anodes are remarkable in a larger pr ocessing system, therefore plasma density in a race track discharge has non -uniformity. Electron suppressers consisting of electrically floating walls ave investigated in order to control local electron flow distances. On a 5 50 mm x 650 mm substrate, a film thickness uniformity is improved from +/-7 .0% to +/-4.4% by use of electron suppressers. (C) 1998 Elsevier Science Lt d. All rights reserved.