W. Puff et al., An investigation of vacancy-like defects in stoichiometric NiAl by means of positron annihilation measurements, ACT MATER, 47(1), 1998, pp. 101-109
Vacancy-like defects in stoichiometric NiAl are investigated by means of po
sitron lifetime and Doppler-broadening measurements after quenching from hi
gh temperatures and proton or electron irradiation. The lifetime of the ann
ealed samples, tau = 178 ps, confirms that remnant defects, most probably V
acancies and vacancy complexes, are quenched-in during the production of th
e samples. The decrease of the positron lifetimes and the S-parameter value
s with increasing quenching temperature are explained with the increasing c
oncentration of Al vacancies. The isochronal annealing of the samples, quen
ched from 1600 degrees C, shows a distinct agglomeration of defects in the
temperature range 400-800 degrees C. After proton and electron irradiation
no change in the positron lifetime is observed. There is an annealing stage
in the temperature range 900-1200 degrees C. The S-parameter after proton
irradiation shows an additional annealing step at around 200 degrees C. Lon
g-time annealing for 520 h at 1150 degrees C does not result in a remarkabl
e reduction of the positron lifetime. (C) 1998 Acta Metallurgica Inc. Publi
shed by Elsevier Science Ltd. All rights reserved.