Calculation of electronic states of Si(337) surface

Citation
Y. Jia et al., Calculation of electronic states of Si(337) surface, ACT PHY C E, 8(1), 1999, pp. 46-51
Citations number
10
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA-OVERSEAS EDITION
ISSN journal
10003290 → ACNP
Volume
8
Issue
1
Year of publication
1999
Pages
46 - 51
Database
ISI
SICI code
1000-3290(199901)8:1<46:COESOS>2.0.ZU;2-Y
Abstract
Using the scattering-theoretic method and employing the nearest-neighbor ti ght-binding formalism to describe the bulk electronic structure, we have st udied the electronic structure of Si(337) surface. The wave-vector-resolved layer densities of states are presented. The results show that; there are six surface bound states in the range from -12.0 to 2.0 ev. Some properties of these surface states are discussed.