Magnetoresistivity in thin La1-xMnO3 films prepared by metal organic chemical vapour deposition

Citation
K. Frohlich et al., Magnetoresistivity in thin La1-xMnO3 films prepared by metal organic chemical vapour deposition, ACT PHYS SL, 48(6), 1998, pp. 727-730
Citations number
5
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SLOVACA
ISSN journal
03230465 → ACNP
Volume
48
Issue
6
Year of publication
1998
Pages
727 - 730
Database
ISI
SICI code
0323-0465(199812)48:6<727:MITLFP>2.0.ZU;2-G
Abstract
We compare magnetoresistive properties of epitaxial and polycrystalline La1 -xMnO3 films. The difference between these two types of films is explained in terms of polarized electron scattering on grain boundaries. We suggest t hat similar mechanism may be responsible for the high field magnetoresistiv ity near the insulator-metal transition in both types of films.