Unipolar complementary circuits using double electron layer tunneling transistors

We demonstrate unipolar complementary circuits consisting of a pair of reso nant tunneling transistors based on the gate control of two-dimensional-two -dimensional interlayer tunneling, where a single transistor-in addition to exhibiting a well-defined negative-differential resistance- can be operate d with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and bandb ending in a double quantum well structure, and show good agreement with exp eriment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devic es connected in series. (C) 1999 American Institute of Physics. [S0003-6951 (99)04902-5].